Vertical Organic Field Effect Transistor (VOFET)

* LINK TO GOOGLE SCHOLAR – KELI SEIDEL (CLICK HERE)

Vertical Organic Field Effect Transistor (VOFET)



One of the main advantages to use this architecture is to overcome the problem of low mobility of charge carriers in organic semiconductors together with the long channel (a few micrometers) used in the planar (organic) field-effect transistor (FET) geometry. Why?

This combination of a long channel and low charge carriers mobility imposes to FETs high voltage  operation and long response times …

On the other hand, in vertical field effect transistor the channel has just a few nanometers of length providing to that device the possibility of very low voltage range operation, fast response time and different electrical configurations…

– Comparing the electrical characterization of the FETs with VOFETs!

VOFETs architecture have all the layers stacked obtaining a channel length of few nanometers, that is, in the order of the thickness film. As a consequence, the electrical characterization shows that this device can present behaviors like: very low voltages operation with high current densities, ambipolar voltage, ambipolar gate modulation (that is a important feature, click here), non-saturation regime, etc…

In the sequence, some figures (with their respective references) that illustrate this geometry.


Vertical Organic Field Effect Transistor - VOFET

https://doi.org/10.1007/s10854-012-0876-5

 

FIGURE FROM: VERTICAL ORGANIC FIELD EFFECT TRANSISTOR USING SULFONATED POLYANILINE/ALUMINUM BILAYER AS INTERMEDIATE ELECTRODE. AUTHORS: KELI F. SEIDEL, et al.

DOI: 10.1007/S10854-012-0876-5


Vertical Field Effect Transistor - VFET

https://doi.org/10.1063/1.3660406

FIGURE FROM: LOW VOLTAGE VERTICAL ORGANIC FIELD-EFFECT TRANSISTOR WITH POLYVINYL ALCOHOL AS GATE INSULATOR. AUTHORS: LUCIELI ROSSI, KELI F. SEIDEL, et al.
DOI: HTTP://DX.DOI.ORG/10.1063/1.3660406


https://doi.org/10.1007/s00339-018-1982-x

Figure from reference “Vertical organic field effect transistor: on–off state definition related to ambipolar gate biasing”. Keli Seidel et al. (2018). https://doi.org/10.1007/s00339-018-1982-x

 

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